• DocumentCode
    895591
  • Title

    An Advanced, Radiation Hardened Bulk CMOS/LSI Technology

  • Author

    Schroeder, J.E. ; Lichtel, R.L. ; Gingerich, B.L.

  • Author_Institution
    Harris Semiconductor, Programs Division P. O. Box 883, Melbourne, Fla. 32901
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    4033
  • Lastpage
    4037
  • Abstract
    An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 × 105 rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.
  • Keywords
    CMOS process; CMOS technology; Circuits; Geometry; Implants; Large scale integration; Oxidation; Radiation hardening; Random access memory; Strips;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335669
  • Filename
    4335669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895591