Title :
UV EPROM Erasure in Flash X-Ray and Co60 Total Dose Environments
Author_Institution :
Advanced Research & Development Laboratory Fairchild Camera and Instrument Corporation 4001 Miranda Avenue Palo Alto, California 94304
Abstract :
UV EPROMs are extremely sensitive to transient x-ray erasure with failures (i.e., partial or complete program loss) at ¿ 108 R/sec. The devices can be reprogrammed but reprogramming is usually accomplished out of the system; therefore, the system has failed when the EPROM program is disturbed. The UV EPROMs fail to total dose exposure, Co60, at levels similar to NMOS dynamic RAMs, i.e., 1500-5000 Rads (Si).
Keywords :
Cameras; Circuits; DRAM chips; EPROM; Instruments; Laboratories; MOS devices; Manufacturing; Performance evaluation; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335670
