DocumentCode
895604
Title
CW Gunn Diodes in Composite Structure (Correspondence)
Author
Mitsui, S.
Volume
17
Issue
12
fYear
1969
fDate
12/1/1969 12:00:00 AM
Firstpage
1158
Lastpage
1160
Abstract
Parallel combinations of Gunn diodes for X-band are fabricated with three types of n-type GaAs crystals. The diodes are mesa structured and mounted upside down on a copper stud of a package in parallel combination. An output power of 450 mW in CW operation at an efficiency of 2.9 percent is obtained in a double-mounted diode at 9 GHz.
Keywords
Circuit testing; Diodes; Electromagnetic heating; Electrons; Frequency modulation; Gunn devices; Microwave oscillators; Packaging; Power generation; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1969.1127120
Filename
1127120
Link To Document