Title :
CW Gunn Diodes in Composite Structure (Correspondence)
fDate :
12/1/1969 12:00:00 AM
Abstract :
Parallel combinations of Gunn diodes for X-band are fabricated with three types of n-type GaAs crystals. The diodes are mesa structured and mounted upside down on a copper stud of a package in parallel combination. An output power of 450 mW in CW operation at an efficiency of 2.9 percent is obtained in a double-mounted diode at 9 GHz.
Keywords :
Circuit testing; Diodes; Electromagnetic heating; Electrons; Frequency modulation; Gunn devices; Microwave oscillators; Packaging; Power generation; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1969.1127120
