Electromagnetic 3-D model for active linear devices: application to pHEMTs in the linear regime

In this paper, we describe a three-dimensional (3D) electromagnetic (EM) approach to the modeling of active devices in their linear regime. The technique basically relies on the self-consistent introduction of distributed controlled current sources in the 3D EM simulation of passive components. The approach is validated by comparing measured and calculated results for a pseudomorphic high electron-mobility transistor in the millimeter-wave range. However, it may also be applied to a larger class of field-effect transistors, including MESFETs.