• DocumentCode
    895668
  • Title

    Bulk neuristor using the Gunn effect

  • Author

    Sugeta, T. ; Ikoma, Takashi ; Yanai, H.

  • Volume
    56
  • Issue
    2
  • fYear
    1968
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    The possibility of a bulk neuristor using bulk negative resistance effects, including the Gunn effect, is presented. The resemblance between the properties of the neuristor and of the Gunn-effect device is noted. T- and S-junctions of neuristors have been designed using Gunn-effect devices. All digital logic functions can be realized by the proposed bulk neuristor.
  • Keywords
    Anodes; Gallium arsenide; Gunn devices; Impurities; Logic arrays; Logic devices; Logic functions; Nerve fibers; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6259
  • Filename
    1448189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895668