A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Author

Kang, Sangbeom ; Cho, Woo Yeong ; Cho, Beak-Hyung ; Lee, Kwang-Jin ; Lee, Chang-Soo ; Oh, Hyung-Rok ; Choi, Byung-Gil ; Wang, Qi ; Kim, Hye-Jin ; Park, Mu-Hui ; Ro, Yu Hwan ; Kim, Suyeon ; Ha, Choong-Duk ; Kim, Ki-Sung ; Kim, Young-Ran ; Kim, Du-Eung ; Kw

Author_Institution

Memory Div., Samsung Electron., Gyeonggi-Do

Volume

42

Issue

1

fYear

2007

Firstpage

210

Lastpage

218

Abstract

A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal times2 write and can be increased to ~2.67 MB/s with times16 write. Endurance and retention characteristics are measured to be 10⁷ cycles and ten years at 99 degC

Keywords

phase changing circuits; random-access storage; 0.1 micron; 0.5 Mbit/s; 1.8 V; 10 ns; 2.67 Mbits/s; 256 MBytes; 62 ns; 66 MHz; 99 C; PRAM; charge pump system; phase-change random access memory; synchronous burst-read operation; CMOS technology; Charge measurement; Charge pumps; Current measurement; Flash memory; Low voltage; Nonvolatile memory; Phase change random access memory; Prefetching; Random access memory; Burst-read; charge pump; endurance; phase-change memory; phase-change random access memory (PRAM); reset; retention;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.888349

Filename

4039587