• DocumentCode
    895708
  • Title

    A Hardened Field Insulator

  • Author

    Hu, G.J. ; Aitken, J.M. ; Dennard, R.H.

  • Author_Institution
    IBM Thomas J. Watson Research Center Yorktown Heights, NY 10598
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    4102
  • Lastpage
    4104
  • Abstract
    In this paper we report results on a new hardened field oxide which exhibits improved resistance to ionizing radiation. This new field insulator shows much less radiation-induced shift in flatband voltage than that of ordinary SiO2 (either thermally grown or chemically vapor deposited). Results are obtained over a range of bias conditions (-10 volts to +22.5 volts) and radiation dosage (0 ~ 4 × 104 rads (SiO2)).
  • Keywords
    Circuits; Dielectrics; FETs; Fabrication; Insulation; Ionizing radiation; MOS capacitors; Radiation hardening; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335682
  • Filename
    4335682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895708