• DocumentCode
    895714
  • Title

    Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures

  • Author

    Lenahan, P.M. ; Brower, K.L. ; Dressendorfer, P.V. ; Johnson, W.C.

  • Author_Institution
    Sandia National Laboratories Albuquerque, New Mexico 87185
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    4105
  • Lastpage
    4106
  • Abstract
    Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.
  • Keywords
    Annealing; Capacitance; Conductivity; Interface states; Ionizing radiation; Laboratories; Paramagnetic resonance; Photonic band gap; Silicon; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335683
  • Filename
    4335683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895714