Title :
A new method for detecting electromigration failure in VLSI metallization
Author :
Rodbell, K.P. ; Shatynski, S.R.
Abstract :
A method has been developed for metallization predictions using a continuous resistance-monitoring technique. A useful lifetime criterion, based on measured resistance changes has been determined that is more sensitive and consequently more accurate than present catastrophic failure techniques.
Keywords :
Electric resistance measurement; electric resistance measurement; Aluminum alloys; Condition monitoring; Electrical resistance measurement; Electromigration; Metallization; Packaging; Silicon; Temperature; Transistors; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052092
