DocumentCode
895715
Title
A new method for detecting electromigration failure in VLSI metallization
Author
Rodbell, K.P. ; Shatynski, S.R.
Volume
19
Issue
1
fYear
1984
Firstpage
98
Lastpage
99
Abstract
A method has been developed for metallization predictions using a continuous resistance-monitoring technique. A useful lifetime criterion, based on measured resistance changes has been determined that is more sensitive and consequently more accurate than present catastrophic failure techniques.
Keywords
Electric resistance measurement; electric resistance measurement; Aluminum alloys; Condition monitoring; Electrical resistance measurement; Electromigration; Metallization; Packaging; Silicon; Temperature; Transistors; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1984.1052092
Filename
1052092
Link To Document