• DocumentCode
    895739
  • Title

    An experimental method for the determination of the saturation point of a MOSFET

  • Author

    Booth, Richard V H ; White, Marvin H.

  • Volume
    19
  • Issue
    1
  • fYear
    1984
  • Firstpage
    113
  • Lastpage
    117
  • Abstract
    This paper presents an extraction technique which determines the drain voltages and currents at saturation directly from experimental data. The technique makes use of both drain current and conductance data. In addition to V/SUB DSS/ and I/SUB DSS/, parameters for the characterization of the saturation region may be extracted via this technique.
  • Keywords
    Characteristics measurement; characteristics measurement; CMOS digital integrated circuits; Data mining; Hydrogen; MOSFET circuits; Operational amplifiers; Power amplifiers; Power dissipation; Predictive models; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1984.1052094
  • Filename
    1052094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895739