DocumentCode
895770
Title
Effect of Photon Energy on the Response of MOS Devices
Author
Dozier, C.M. ; Brown, D.B.
Author_Institution
Naval Research Laboratory Washington, D. C. 20375
Volume
28
Issue
6
fYear
1981
Firstpage
4137
Lastpage
4141
Abstract
Radiation-produced flatband voltage shifts in MOS capacitors have been measured as a function of incident photon energy and applied electric fields with UV, x- and gamma-ray sources spanning the energy range 70 eV to 1.25 MeV. Special interest was directed to the energies below 20 keV where the greatest effects on the flatband voltages were expected. At 70 eV the shifts are almost as great as those observed at 1.25 MeV (60Co). For 1.49 keV incident photons the voltage shifts are less than 1/3 those observed for 60Co photons.
Keywords
Electronic equipment testing; Electrons; Energy measurement; Laboratories; MOS capacitors; MOS devices; Predictive models; Radiation effects; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1981.4335689
Filename
4335689
Link To Document