DocumentCode
895785
Title
Linear theory of the quasi-unipolar photodiode
Author
Yoder, P.D. ; Flynn, E.J.
Author_Institution
Georgia Inst. of Technol., Savannah, GA, USA
Volume
24
Issue
4
fYear
2006
fDate
4/1/2006 12:00:00 AM
Firstpage
1937
Lastpage
1945
Abstract
Quasi-unipolar (QU) operation, in which unequal numbers of electrons and holes participate in the photocurrent, is proposed as a strategy for optimizing III-V photodetector bandwidth. Analytic expressions are derived for the transport of photogenerated charge, based on a linearization of the first two moments of the Boltzmann transport equation. Microscopic charge and current densities are shown to imply an equivalent circuit model for the QU detector, for which the familiar heterojunction p-i-n and unitraveling-carrier detectors are limiting cases. Simulations demonstrate that a maximum 3-dB bandwidth may be achieved via a QU rather than a purely bipolar or unipolar operation and without penalty to junction capacitance or quantum efficiency.
Keywords
Boltzmann equation; III-V semiconductors; current density; photoconductivity; photodiodes; semiconductor device models; Boltzmann transport equation; capacitance; current density; heterojunction p-i-n detector; photocurrent; quantum efficiency; quasiunipolar photodiode; unitraveling-carrier detector; Bandwidth; Boltzmann equation; Charge carrier processes; Current density; Detectors; III-V semiconductor materials; Microscopy; Photoconductivity; Photodetectors; Photodiodes; Photodiodes; semiconductor device modeling;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2006.871034
Filename
1618785
Link To Document