• DocumentCode
    895785
  • Title

    Linear theory of the quasi-unipolar photodiode

  • Author

    Yoder, P.D. ; Flynn, E.J.

  • Author_Institution
    Georgia Inst. of Technol., Savannah, GA, USA
  • Volume
    24
  • Issue
    4
  • fYear
    2006
  • fDate
    4/1/2006 12:00:00 AM
  • Firstpage
    1937
  • Lastpage
    1945
  • Abstract
    Quasi-unipolar (QU) operation, in which unequal numbers of electrons and holes participate in the photocurrent, is proposed as a strategy for optimizing III-V photodetector bandwidth. Analytic expressions are derived for the transport of photogenerated charge, based on a linearization of the first two moments of the Boltzmann transport equation. Microscopic charge and current densities are shown to imply an equivalent circuit model for the QU detector, for which the familiar heterojunction p-i-n and unitraveling-carrier detectors are limiting cases. Simulations demonstrate that a maximum 3-dB bandwidth may be achieved via a QU rather than a purely bipolar or unipolar operation and without penalty to junction capacitance or quantum efficiency.
  • Keywords
    Boltzmann equation; III-V semiconductors; current density; photoconductivity; photodiodes; semiconductor device models; Boltzmann transport equation; capacitance; current density; heterojunction p-i-n detector; photocurrent; quantum efficiency; quasiunipolar photodiode; unitraveling-carrier detector; Bandwidth; Boltzmann equation; Charge carrier processes; Current density; Detectors; III-V semiconductor materials; Microscopy; Photoconductivity; Photodetectors; Photodiodes; Photodiodes; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2006.871034
  • Filename
    1618785