DocumentCode :
895785
Title :
Linear theory of the quasi-unipolar photodiode
Author :
Yoder, P.D. ; Flynn, E.J.
Author_Institution :
Georgia Inst. of Technol., Savannah, GA, USA
Volume :
24
Issue :
4
fYear :
2006
fDate :
4/1/2006 12:00:00 AM
Firstpage :
1937
Lastpage :
1945
Abstract :
Quasi-unipolar (QU) operation, in which unequal numbers of electrons and holes participate in the photocurrent, is proposed as a strategy for optimizing III-V photodetector bandwidth. Analytic expressions are derived for the transport of photogenerated charge, based on a linearization of the first two moments of the Boltzmann transport equation. Microscopic charge and current densities are shown to imply an equivalent circuit model for the QU detector, for which the familiar heterojunction p-i-n and unitraveling-carrier detectors are limiting cases. Simulations demonstrate that a maximum 3-dB bandwidth may be achieved via a QU rather than a purely bipolar or unipolar operation and without penalty to junction capacitance or quantum efficiency.
Keywords :
Boltzmann equation; III-V semiconductors; current density; photoconductivity; photodiodes; semiconductor device models; Boltzmann transport equation; capacitance; current density; heterojunction p-i-n detector; photocurrent; quantum efficiency; quasiunipolar photodiode; unitraveling-carrier detector; Bandwidth; Boltzmann equation; Charge carrier processes; Current density; Detectors; III-V semiconductor materials; Microscopy; Photoconductivity; Photodetectors; Photodiodes; Photodiodes; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2006.871034
Filename :
1618785
Link To Document :
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