Title :
Gunn-type oscillations in Ge, GaAs, and other materials
fDate :
3/1/1968 12:00:00 AM
Abstract :
Minimum nL-products for oscillations to occur similar to the Gunn effect in GaAs have been calculated for a broad range of materials parameters, including effects of variation of dc electric field and drift velocity across the sample. The minimum nL-product is approximately inversely proportional to high-field negative mobility.
Keywords :
Anodes; Cathodes; Current measurement; Electric variables measurement; Electron mobility; Equalizers; Fluid flow measurement; Gallium arsenide; Microwave measurements; Semiconductor diodes;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6283
