DocumentCode :
895960
Title :
Schottky emission in thin-film diodes containing manganese
Author :
Hitchcock, R.D.
Volume :
56
Issue :
3
fYear :
1968
fDate :
3/1/1968 12:00:00 AM
Firstpage :
335
Lastpage :
336
Abstract :
Temperature-dependent I-V characteristics have been observed in thin-film diodes consisting of Al, Mn, and Pb. Straight-line plots of In I - V1/2, d in I/dV1/2- 1/T, and In (I/T2)-1/T indicate that Schottky emission is taking place. A diode was tested for 98 hours without barrier breakdown.
Keywords :
Artificial intelligence; Atmosphere; Glass; Manganese; Polymer films; Schottky diodes; Strips; Temperature; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6287
Filename :
1448217
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=895960
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