Title :
Use of a Pinch Resistor for Neutron Hardness Assurance Screening of Bipolar Integrated Circuits
Author :
Ahlport, B. ; King, E.E. ; Russo, J. ; Long, D.M.
Author_Institution :
Northrop Electronics Division 2301 West 120th Street Hawthorne, CA 90250
Abstract :
It is shown that a pinch resistor can be used to predict the neutron induced gain degradation of a related bipolar transistor. The experimental data indicate that the prediction accuracy can be at least as good as that obtained using the VBE(ON) measurement with a breakout transistor. Thus, the pinch resistor provides a simple DC test element which can be very effective in implementing a 100% electrical screening technique for the neutron hardness assurance of bipolar integrated circuits.
Keywords :
Bipolar integrated circuits; Capacitance; Circuit testing; Electric variables measurement; Integrated circuit measurements; Integrated circuit testing; Neutrons; Performance evaluation; Resistors; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335721