Evaluation of EMP Failure Models for Discrete Semiconductor Devices

Empirical models are often used in EMP assessments of electronic equipment. Two such sets of models previously developed for prediction of EMP failure levels of discrete silicon bipolar semiconductor devices are evaluated. The sample mean and standard deviation of the ratio of failure model calculated to experimentally measured damage constant for each model and device type form the basis of the evaluation. The sample mean is used to evaluate the predictive accuracy of each model. The sample standard deviation is used to develop error bounds and to evaluate the recommended hierarchy of use of each of the model sets. The computerized data base SUPERSAP2 is the source of device numbers and experimental damage constants. Model input parameters are device electrical characteristics extracted from SUPERSAP2, vendor catalogs, and D.A.T.A. books.