Computer Modeling and Radiation Testing of AlGaAs Photodiode Structures

A detailed one-dimensional computer model has been used to identify the device characteristics which determine the undesirable current induced in various AlGaAs photodiode structures by ionizing radiation. The calculations were performed to aid in the design of AlGaAs photodiode structures operating at ¿=.82¿m with optimized radiation insensitivities. Various AlGaAs photodiode structures have been grown and experimentally characterized to test the model. Good agreement between calculated and measured characteristics have been obtained, indicating that the model provides a good description of the factors affecting the radiation sensitivity and the optical response of AlGaAs photodiodes.