Title :
Symmetrical up-Diffused I2L
Author :
Ragonese, Louis J. ; Dening, David C. ; Benedict, Robert V. ; Casey, Richard H. ; Black, Bruce W.
Author_Institution :
General Electric Electronics Laboratory EP3-109 P.O. Box 4840 Syracuse, New York 13221
Abstract :
An up-diffused form of symmetrical cell Integrated Injection Logic (I2L) has been designed, modeled, fabricated, and demonstrated to be fully operating after 6 × 1014 neutrons/cm2. This technology is expected also to be capable of full operation after > 3 × 106 Rad(Si) ionizing radiation and immune to information upset at levels above 1 × 1010 Rad(Si)/s based on experience with related devices.
Keywords :
Cutoff frequency; Doping profiles; Ionizing radiation; Laboratories; Logic design; Logic devices; Logic gates; Neutrons; Schottky diodes; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335727
