• DocumentCode
    896193
  • Title

    Radiation Effects on Silicon MESFET Devices and Circuits

  • Author

    Shedd, W.M. ; Kim, Y. ; Darley, H.M. ; Houston, T.W.

  • Author_Institution
    Rome Air Development Center Hanscom AFB, Massachusetts 01731
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    4376
  • Lastpage
    4379
  • Abstract
    An experimental evaluation of the radiation tolerance of silicon MESFET devices and simple digital integrated circuits is presented. Circuit performance in both total dose and transient radiation environments have been determined. Test circuits employing both enhancement and depletion logic elements of various geometries are described and the radiation response compared.
  • Keywords
    Circuit optimization; Circuit testing; Digital integrated circuits; Logic circuits; Logic devices; Logic testing; MESFET circuits; MESFET integrated circuits; Radiation effects; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335732
  • Filename
    4335732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=896193