DocumentCode :
896222
Title :
A Study of the Single-Frequency Quenched-Domain Mode Gunn-Effect Oscillator
Author :
Khandelwal, Deen D. ; Curtice, Walter R.
Volume :
18
Issue :
4
fYear :
1970
fDate :
4/1/1970 12:00:00 AM
Firstpage :
178
Lastpage :
187
Abstract :
A large-signal analysis of the high-frequency quenched-domain mode (Q-mode) of Gunn-effect devices has been developed. This is a phenomenological model and includes such effects as distinct domain formation and quenching processes, domain behavior in the presence of an RF voltage, displacement current, voltage dependence of the domain width, and others. The basis of the analysis is to obtain an instantaneous current-voltage transfer characteristic for the device and use it to generate the current waveform corresponding to a given periodic voltage waveform. The basic results of the large-signal analysis are then obtained from these current waveforms. The analysis reveals the distinguishing features of Q-mode oscillators. Admittance measurements on the oscillating device have been made and support the theoretical results for single-frequency operation. Applications of this analysis for investigating other nonlinear properties of these devices are suggested.
Keywords :
Admittance measurement; Character generation; Circuits; Delay; Electrons; Laboratories; Microwave oscillators; Physics; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1970.1127187
Filename :
1127187
Link To Document :
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