Characterization of n-type β-SiC as a piezoresistor

Author

Shor, Joseph S. ; Goldstein, David ; Kurtz, Anthony D.

Author_Institution

Kulite Semiconductor Products Inc., Leonia, NJ, USA

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1093

Lastpage

1099

Abstract

SiC is currently being investigated for device applications involving high temperatures. The properties of n-type β-SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels. The maximum gauge factor observed was -31.8 for unintentionally doped (10¹⁶-10¹⁷/cm³) material. This gauge factor decreases with temperature to approximately half its room-temperature value at 450°C. Unintentionally doped SiC has a roughly constant TCR of 0.72%/°C over the range 25-800°C and exhibits full impurity ionization at room temperature. Degenerately doped gauges (N_d=10²⁰/cm³) exhibited a lower gauge factor (-12.7), with a more constant temperature behavior and a lower TCR (0.04%/°C). The mechanisms of the piezoresistive effect and TCR in n-SiC are discussed, as well as their application towards sensors

Keywords

piezoresistance; pressure sensors; semiconductor materials; silicon compounds; strain gauges; 25 to 800 degC; SiC; degenerately doped gauges; doping levels; gauge factor; impurity ionization; n-type β-SiC; piezoresistance; piezoresistive effect; piezoresistor; pressure measurement; sensors; strain gauge; temperature coefficient of resistivity; Capacitive sensors; Doping; Piezoresistance; Pressure measurement; Sensor phenomena and characterization; Silicon carbide; Strain measurement; Temperature sensors; Tensile stress; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214734

Filename

214734