Title :
Characterization of n-type β-SiC as a piezoresistor
Author :
Shor, Joseph S. ; Goldstein, David ; Kurtz, Anthony D.
Author_Institution :
Kulite Semiconductor Products Inc., Leonia, NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
SiC is currently being investigated for device applications involving high temperatures. The properties of n-type β-SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels. The maximum gauge factor observed was -31.8 for unintentionally doped (1016-1017/cm3) material. This gauge factor decreases with temperature to approximately half its room-temperature value at 450°C. Unintentionally doped SiC has a roughly constant TCR of 0.72%/°C over the range 25-800°C and exhibits full impurity ionization at room temperature. Degenerately doped gauges (Nd=1020/cm3) exhibited a lower gauge factor (-12.7), with a more constant temperature behavior and a lower TCR (0.04%/°C). The mechanisms of the piezoresistive effect and TCR in n-SiC are discussed, as well as their application towards sensors
Keywords :
piezoresistance; pressure sensors; semiconductor materials; silicon compounds; strain gauges; 25 to 800 degC; SiC; degenerately doped gauges; doping levels; gauge factor; impurity ionization; n-type β-SiC; piezoresistance; piezoresistive effect; piezoresistor; pressure measurement; sensors; strain gauge; temperature coefficient of resistivity; Capacitive sensors; Doping; Piezoresistance; Pressure measurement; Sensor phenomena and characterization; Silicon carbide; Strain measurement; Temperature sensors; Tensile stress; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
