Title :
Novel high-isolation FET switches
Author :
Imai, Nobuaki ; Minakawa, Akira ; Okazaki, Hiroshi
Author_Institution :
ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan
fDate :
5/1/1996 12:00:00 AM
Abstract :
This paper describes novel high-isolation monolithic microwave/millimeter-wave integrated circuit (MMIC) field-effect transistor (FET) switches that have higher isolation characteristics than conventional switches without much insertion loss degradation. The newly developed switches consist of series/shunt FETs and T-shaped R-C-R circuit. Each FET switch utilizes the parasitic capacitive component of the FETs in the off-state to produce a band-rejection filter at the operating frequency. The design method of the newly proposed switches and their characteristics are described herein. With this method, the isolation characteristics are improved by more than 15 dB between 5.4 GHz and 6.4 GHz and more than 20 dB between 5.5 GHz and 6.1 GHz over conventional values
Keywords :
field effect MMIC; field effect transistor switches; microwave isolators; 5.4 to 6.4 GHz; T-shaped R-C-R circuit; band-rejection filter; high-isolation MMIC FET switches; insertion loss; parasitic capacitance; series/shunt FETs; Degradation; Design methodology; Field effect MMICs; Filters; Frequency; Insertion loss; Microwave FETs; Millimeter wave integrated circuits; Switches; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
