Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

Author

Seghir, Hachemi ; Cristoloveanu, Sorin ; Jerisian, Robert ; Oualid, Jean ; Auberton-Herve, A.-J.

Author_Institution

LPCS, Grenoble, France

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1104

Lastpage

1111

Abstract

The leakage and charge pumping currents were measured in gate-controlled MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiencies of the techniques as well as their complementary features are analyzed for various experimental conditions. The interface properties of device-grade SIMOX wafers are characterized and shown to be compatible with VLSI requirements. Special interface coupling effects, which occur only in fully depleted SOI devices and modify the conventional signature of charge pumping and leakage current, are thoroughly investigated

Keywords

SIMOX; interface electron states; leakage currents; metal-insulator-semiconductor devices; p-i-n diodes; Si on insulator; Si-SiO₂; charge pumping currents; device-grade SIMOX wafers; fully depleted SOI devices; gate-controlled MOS p-i-n diodes; interface coupling effects; interface properties; leakage current; thin SIMOX substrates; Charge measurement; Charge pumps; Current measurement; Leakage current; P-i-n diodes; Semiconductor films; Silicon on insulator technology; Substrates; Testing; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214736

Filename

214736