Surface potential at threshold in thin-film SOI MOSFET´s

Author

Mazhari, Baquer ; Ioannou, Dimitris E.

Author_Institution

Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1129

Lastpage

1133

Abstract

The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted transistors is obtained analytically in terms of device dimensions, film doping level, and applied voltages. The results are in excellent agreement with one-dimensional numerical simulations, and it is shown that the surface potential at threshold may differ significantly from 2φ_F, the value conventionally assumed

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; Si-SiO₂; applied voltages; device dimensions; film doping level; fully depleted transistors; one-dimensional numerical simulations; thin film SOI MOSFET; threshold; Capacitance; Couplings; Doping; MOSFET circuits; Numerical simulation; Semiconductor films; Silicon; Subthreshold current; Threshold voltage; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214739

Filename

214739