Title :
Surface potential at threshold in thin-film SOI MOSFET´s
Author :
Mazhari, Baquer ; Ioannou, Dimitris E.
Author_Institution :
Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted transistors is obtained analytically in terms of device dimensions, film doping level, and applied voltages. The results are in excellent agreement with one-dimensional numerical simulations, and it is shown that the surface potential at threshold may differ significantly from 2φF, the value conventionally assumed
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; Si-SiO2; applied voltages; device dimensions; film doping level; fully depleted transistors; one-dimensional numerical simulations; thin film SOI MOSFET; threshold; Capacitance; Couplings; Doping; MOSFET circuits; Numerical simulation; Semiconductor films; Silicon; Subthreshold current; Threshold voltage; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
