A new technique for measuring MOSFET inversion layer mobility

Author

Huang, Cheng-Liang ; Faricelli, John V. ; Arora, Narain D.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1134

Lastpage

1139

Abstract

An experimental technique for accurately determining both the inversion charge and the channel mobility μ of a MOSFET is presented. With this new technique, the inversion charge is measured as a function of the gate and drain voltages. This improvement allows the channel mobility to be extracted independent of drain voltage V_DS over a wide range of voltages (V_DS=20-100 mV). The resulting μ(V_GS) curves for different V_DS show no drastic mobility roll-off at V _GS near V_TH. This suggests that the roll-off seen in the mobility data extracted using the split C- V method is probably due to inaccurate inversion charge measurements instead of Coulombic scattering

Keywords

carrier mobility; charge measurement; electric variables measurement; insulated gate field effect transistors; inversion layers; 20 to 100 mV; MOSFET inversion layer mobility; channel mobility; drain voltages; gate voltage; inversion charge; measurement technique; mobility roll-off; Capacitance; Capacitance-voltage characteristics; Charge measurement; Current measurement; Data mining; Frequency; Intrusion detection; MOSFET circuits; Q measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214740

Filename

214740