Title :
Microwave switching with Gunn-effect diodes
Author :
Sugimoto, Satoshi ; Sugiura, Toshihiko
fDate :
3/1/1968 12:00:00 AM
Abstract :
A reflection-type microwave switch with a Gunn-effect diode has been developed which is actuated by a signal of 300 mW at 11.732 GHz with a switching time less than 1 ns, an insertion loss less thin 0.25 dB, and an on-off ratio more than 30 dB.
Keywords :
Contracts; Diodes; Laboratories; Microwave devices; Microwave transistors; Modems; Monitoring;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6321
