Optical and electrical oscillations in double-heterojunction negative differential resistance devices

Author

Kovacic, Stephen J. ; Ojha, Jugnu J. ; Simmons, John G. ; Jessop, Paul E. ; Mand, Ranjit S. ; SpringThorpe, Anthony J.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

40

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1154

Lastpage

1160

Abstract

The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are correlated to the negative differential resistance (NDR) region typically observed in the current-voltage (I-V ) characteristics of this heterostructure. Plateaulike DC I-V characteristics in the NDR region and an apparent enhancement of the DC luminescence are shown to be a direct result of device oscillations in the NDR regime. External and intrinsic circuit parameters are demonstrated to determine the temporal characteristics of both the electrical and optical oscillations. These oscillations can be of sufficient magnitude to induce lasing at apparently very low DC current levels. It is shown that an external optical pulse can be used to induce the extent of the NDR region and thereby quench optical oscillations. In this manner, an optically controlled free-running optical oscillator is demonstrated

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; negative resistance; optical bistability; optical switches; photoconducting devices; semiconductor lasers; semiconductor switches; DC luminescence; DOES; GaAs-AlGaAs; GaAs/AlGaAs digital optoelectronic switch; LED; current voltage characteristics; double-heterojunction negative differential resistance devices; electrical oscillations; external circuit parameters; external optical pulse; intrinsic circuit parameters; lasing; optical oscillations; optically controlled free-running optical oscillator; plateaulike DC I-V characteristics; temporal characteristics; very low DC current levels; Electric resistance; Electrical resistance measurement; Gallium arsenide; Light emitting diodes; Optical bistability; Optical control; Optical devices; Optical switches; RLC circuits; Stimulated emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.214743

Filename

214743