Title :
Formation of high-quality oxide/nitride stacked layers on rugged polysilicon electrodes by rapid thermal oxidation
Author :
Itoh, S. ; Lo, G.Q. ; Kwong, D.L. ; Mathews, V.K. ; Fazan, P.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
It is demonstrated that the use of rapid thermal oxidation (RTO) of thin Si3N4 films deposited on rugged poly-Si electrodes greatly improves the reliability of the films, compared to conventional wet (steam) oxidation. Superior TDDB characteristics and suppression of capacitance loss during high-field stress have been achieved by RTO
Keywords :
dielectric losses; dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor devices; oxidation; rapid thermal processing; reliability; silicon compounds; DRAM storage dielectric; RTO; Si; Si-SiO2-Si3N4; TDDB characteristics; capacitance loss; high-field stress; high-quality oxide/nitride stacked layers; rapid thermal oxidation; reliability; rugged polysilicon electrodes; Doping; Electrodes; Electron devices; FETs; Fabrication; Gallium arsenide; HEMTs; MODFETs; Semiconductor process modeling; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
