• DocumentCode
    896416
  • Title

    Enhanced electron trapping in reoxidized nitrided oxide dielectric at 77 K

  • Author

    Das, N.C. ; Nathan, V. ; Cable, J.S.

  • Author_Institution
    Phillips Lab., Kirtland AFB, NM, USA
  • Volume
    40
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    1179
  • Lastpage
    1181
  • Abstract
    The results of experiments on the electron trapping effect in ONO devices at cryogenic temperature are presented and compared with results for SiO2 devices. Various types of ONO devices are used in the experiment in order to determine the mechanism of enhanced electron trapping phenomena in these devices
  • Keywords
    cryogenics; electron traps; hot carriers; insulated gate field effect transistors; interface electron states; leakage currents; nitridation; oxidation; rapid thermal processing; semiconductor device testing; 77 K; GIDL current; ONO devices; RTP; SiO2-Si3N4; cryogenic temperature; electron trapping; gate induced drain leakage; hot carrier stressing; interface state density; nMOSFET; reoxidized nitrided oxide dielectric; Cryogenics; Dielectric devices; Electron mobility; Electron traps; Hot carriers; Interface states; Rapid thermal processing; Semiconductor films; Superconducting cables; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.214750
  • Filename
    214750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=896416