Design methodology for the optimization of transformer-loaded RF circuits

Author

Carrara, Francesco ; Italia, Alessandro ; Ragonese, Egidio ; Palmisano, Giuseppe

Author_Institution

Dipt. di Ingegneria Elettrica, Elettronica e dei Sistemi, Univ. di Catania, Italy

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

761

Lastpage

768

Abstract

In this paper, a design methodology for the optimization of transformer-loaded RF circuits is presented. The optimization procedure is based on a novel figure of merit for the integrated transformer (namely the transformer characteristic resistance), which was introduced to quantify its performance when operated as a tuned load. Using the proposed approach, a highly linear up-converter for 5-GHz wireless LAN applications was implemented in a 45-GHz-f_T SiGe HBT technology. The circuit achieved an output 1-dB compression point of 4.5 dBm and a power gain of 18 dB, while drawing only 34 mA from a 3-V power supply.

Keywords

Ge-Si alloys; MMIC; bipolar integrated circuits; circuit optimisation; convertors; integrated circuit design; transformers; wireless LAN; 18 dB; 3 V; 34 mA; 45 GHz; 5 GHz; SiGe; heterojunction bipolar transistors; integrated transformer; linear up-converter; transformer-loaded RF circuits; tuned load; wireless LAN; Design methodology; Design optimization; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Power supplies; Radio frequency; Silicon germanium; Wireless LAN; Figure of merit; SiGe HBT; integrated transformer; transformer characteristic resistance (TCR); tuned load; up-converter; wireless LAN (WLAN);

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2005.860117

Filename

1618863