Title :
A wide range linear variable resistor by buried channel MOS/SIMOX
Author :
Akiya, Masahiro ; Nakashima, Sadao ; Kato, Kotaro
Abstract :
A low-distortion linear variable resistor using an offset gate buried-channel MOSFET fabricated by SIMOX technology is described. The offset gate structure on the insulating substrate provides 15 to 100 k/spl Omega/ drain-to-source resistance, and 2.5% total harmonic distortion at 100 k/spl Omega/. In a battery-feed circuit application for a subscriber-line interface circuit, the area of a variable conventional polysilicon resistor.
Keywords :
Electronic switching systems; Field effect integrated circuits; Insulated gate field effect transistors; Large scale integration; Resistors; Telephone exchanges; electronic switching systems; field effect integrated circuits; insulated gate field effect transistors; large scale integration; resistors; telephone exchanges; Batteries; Fabrication; Feeds; Impurities; Insulation; MOSFET circuits; Resistors; Silicon; Threshold voltage; Total harmonic distortion;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052177
