Title :
Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters
Author :
Campera, Andrea ; Iannaccone, Giuseppe ; Crupi, Felice
Author_Institution :
Pisa Univ.
Abstract :
In this paper, we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage (I-V) characteristics, it is possible to extract a series of material parameters of alternative gate dielectrics. We have focused on HfO2 and HfSiXOYNZ gate stacks and have extracted information on the nature of localized states in the dielectric responsible for a trap-assisted tunneling (TAT) current component and for the temperature behavior of the I-V characteristics. Simulations are based on a one-dimensional Poisson-Schroumldinger solver capable to provide the pure tunneling current and TAT component. Energy and capture cross section of traps responsible for TAT current have been extracted
Keywords :
Poisson equation; Schrodinger equation; dielectric materials; hafnium; hafnium compounds; silicon compounds; tunnelling; 1D Poisson-Schrodinger solver; Hf; Hf-based gate stacks; HfO2; HfO2 gate stacks; HfSiXOYNZ gate stacks; HfSiON; I-V characteristics; capacitance-voltage characteristics; current-voltage characteristics; electrical characterization; gate dielectrics; material parameter extraction; quantum simulations; trap-assisted tunneling; tunnelling currents; CMOS technology; Capacitance; Data mining; Dielectric materials; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Photonic band gap; Temperature; Tunneling; Gate leakage; high-$k$ dielectrics; trap cross section; trap-assisted tunneling (TAT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887202
