The Role of Volume Inversion on the Intrinsic RF Performance of Double-Gate FinFETs

Author

Curatola, Gilberto ; Nuttinck, Sebastien

Author_Institution

NXP Semicond., Heverlee

Volume

54

Issue

1

fYear

2007

Firstpage

141

Lastpage

150

Abstract

Quantum interactions between the inversion channels of multigate devices and their resulting effects on charge distribution and carrier mobility are analyzed in this paper. Results of this analysis are then used to assess the role of volume inversion on the intrinsic RF performance of double-gate FinFETs. Thin-fin devices are beneficial to low-operating and high-performance powers, and wideband RF blocks, while they are detrimental to low-power cross coupled pair-based RF oscillators, and are more power hungry for high-performance oscillators. Also, we highlight that the intrinsic capacitance variation induced by the fin volume inversion dominates the power and wideband RF performance of FinFETs over the variation in carrier mobility. Accurate definition of fin below 8-10 nm will enable extreme RF performance devices

Keywords

MOSFET; Poisson equation; Schrodinger equation; carrier density; carrier mobility; semiconductor device models; RF oscillators; carrier mobility; charge distribution; double-gate FinFET; fin volume inversion; intrinsic RF performance; intrinsic capacitance variation; inversion channels; multigate devices; quantum effects; thin fin devices; CMOS technology; Electron mobility; FinFETs; Microwave technology; Oscillators; Performance analysis; Potential well; Quantum capacitance; Radio frequency; Wideband; FinFET; RF; quantum effects; volume inversion;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.887224

Filename

4039691