DocumentCode :
896837
Title :
Field effect transistor circulators
Author :
Ayasli, Yalcin
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Volume :
25
Issue :
5
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
3242
Lastpage :
3247
Abstract :
Field-effect-transistor circulators that are compatible with monolithic microwave integrated circuit technology are described. These passive nonreciprocal components are formed with inductors, capacitors, transmission line sections, and microwave transistors, and all can be integrated on a single IC chip the size of a pinhead. The operating principle, power-handling capability, and noise performance of these components are discussed for both narrowband and wideband applications, and examples of their practical implementation are given. The transistor-based 2-, 3-, and 4-port passive nonreciprocal components described offer an alternative to ferrite miniature circulators with potential advantages of small size and lower cost in production volume
Keywords :
MMIC; circulators (microwave); electron device noise; field effect integrated circuits; 6 to 18 GHz; FET circulators; IC chip; MESFET; MMIC compatible; SHF; X-band; four-port type; microwave integrated circuit; microwave transistors; narrowband applications; noise performance; passive nonreciprocal components; power-handling capability; three-port type; two-port type; wideband applications; Capacitors; Circulators; Distributed parameter circuits; Inductors; Integrated circuit technology; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave transistors; Power transmission lines;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.42266
Filename :
42266
Link To Document :
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