DocumentCode
896892
Title
High-power quenched Gunn oscillators
Author
Barber, M.R.
Volume
56
Issue
4
fYear
1968
fDate
4/1/1968 12:00:00 AM
Firstpage
752
Lastpage
753
Abstract
The high-power bulk GaAs oscillator operating in the quenched multiple dipole mode is described and analyzed. It is shown that this oscillatory mode could give dc-to-RF conversion efficiencies of up to 8 percent at several times the normal Gunn transit-time frequency, and that the power output is directly proportional to the semiconductor volume.
Keywords
Artificial intelligence; Dielectrics; Gallium arsenide; Gunn devices; Oscillators; RLC circuits; Radio frequency; Resonance; Threshold voltage; Voltage fluctuations;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6374
Filename
1448304
Link To Document