Numerical Study of C–V Characteristics of Double-Gate Ultrathin SOI MOSFETs

Author

Watanabe, Hiroshi ; Uchida, Ken ; Kinoshita, Atsuhiro

Author_Institution

Toshiba Corp., Yokohama

Volume

54

Issue

1

fYear

2007

Firstpage

52

Lastpage

58

Abstract

Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrodinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n⁺poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport

Keywords

MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; impurities; semiconductor device models; semiconductor doping; silicon; silicon-on-insulator; C-V characteristics; Poisson-Schrodinger solver; SOI MOSFET; Si; back-gate bias dependence; capacitance-voltage characteristics; double-gate ultrathin MOSFET; n⁺poly-Si/oxide/SOI/oxide/p-Si capacitor; silicon-on-insulator MOSFET; volume inversion; Capacitance-voltage characteristics; Capacitors; Ionization; MOSFETs; Semiconductor device doping; Semiconductor impurities; Semiconductor process modeling; Silicon on insulator technology; Temperature; Volume measurement; Confinement; MOS devices; double-gate; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.887053

Filename

4039712