DocumentCode
896965
Title
Statistics of Grain Boundaries in Polysilicon
Author
Watanabe, Hiroshi
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
Volume
54
Issue
1
fYear
2007
Firstpage
38
Lastpage
44
Abstract
A nanometer-scale variation of grain boundary locations in gate polysilicon is investigated in detail based on the assumption that the arrangement of grain boundaries obeys Poisson distribution. The statistics of grain boundaries described here reveals a relation between nanoscopic location and the arrangement of grain boundaries, which implies fluctuation in transistor characteristics of 45-nm and beyond MOSFETs
Keywords
MOSFET; Poisson distribution; grain boundaries; nanoelectronics; silicon; 45 nm; MOSFET; Poisson distribution; Si; gate polysilicon; grain boundary locations; statistics; Fluctuations; Grain boundaries; Leakage current; MOS devices; MOSFETs; Random access memory; Silicon; Statistical distributions; Statistics; Thin film transistors; Entropy; MOS devices; Poisson distribution; SRAM; fluctuation; grain boundary; polysilicon; statistics;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.887212
Filename
4039713
Link To Document