• DocumentCode
    897075
  • Title

    GaxIn/sub 1-x/AsyP/sub 1-y/-InP tensile-strained quantum wells for 1.3-μm low-threshold lasers

  • Author

    Yokouchi, N. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.

  • Author_Institution
    R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
  • Volume
    7
  • Issue
    8
  • fYear
    1995
  • Firstpage
    842
  • Lastpage
    844
  • Abstract
    Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/-InP tensile-strained multiple quantum wells (MQWs) grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) are studied for the application to 1.3-μm lasers. High-resolution X-ray diffraction curves show good agreement with theoretical simulation. Clear energy separation of light hole and heavy hole bands is observed in the room temperature photoluminescence measurement. Threshold characteristics of -1.15% tensile-strained MQW lasers with graded index separate confinement heterostructure (GRINSCH) are investigated. The minimum threshold current density per well (J/sub th//N/sub w/) for infinite cavity length obtained is 100 A/cm2 for the device with a well number of 3. Tensile strain dependence of J/sub th//N/sub w/ for an infinite cavity is also clarified.
  • Keywords
    III-V semiconductors; X-ray diffraction; current density; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser beams; laser cavity resonators; optical fabrication; photoluminescence; quantum well lasers; vapour phase epitaxial growth; 1.3 mum; 298 K; Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/-InP; GaInAsP-InP; energy separation; graded index separate confinement heterostructure; heavy hole bands; high-resolution X-ray diffraction curve; infinite cavity length; light hole bands; low pressure metalorganic chemical vapor deposition; low-threshold lasers; minimum threshold current density; multiple quantum wells; room temperature photoluminescence measurement; tensile strain dependence; tensile-strained MQW lasers; tensile-strained quantum wells; threshold characteristics; Chemical lasers; Chemical vapor deposition; Laser applications; Laser theory; Photoluminescence; Quantum well devices; Quantum well lasers; Temperature measurement; X-ray diffraction; X-ray lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.403991
  • Filename
    403991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897075