Title :
Gain-coupled distributed-feedback GaInAs-GaAs laser structures defined by maskless patterning with focused ion beams
Author :
Orth, A. ; Reithmaier, J.P. ; Faller, F. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
First-order periodic gain modulation in GaInAs-GaAs laser structures has been realized by maskless focused ion-beam implantation. The structures were implanted with Ga/sup +/-ions at an ion energy of 130 keV and a line dose of 1*10/sup 7/ 1/cm. The periodicity of the gratings was designed for laser operation at 77 K and room temperature. With optical pumping we have observed single-mode laser operation due to the distributed feedback effect at wavelengths between 849 mn and 944 mn at 77 K (grating periods between 124 and 140 nm) and between 954 nm and 1005 mn at room temperature (grating periods between 140 and 148 nm).<>
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; ion implantation; laser feedback; laser modes; optical couplers; optical fabrication; optical modulation; optical pumping; quantum well lasers; 298 K; 77 K; 849 to 944 nm; 954 to 1005 nm; Ga/sup +/-ions; GaInAs-GaAs; distributed feedback effect; first-order periodic gain modulation; focused ion beams; gain-coupled distributed-feedback laser; grating periods; gratings; ion energy; laser operation; line dose; maskless focused ion-beam implantation; maskless patterning; optical pumping; periodicity; room temperature; single-mode laser operation; wavelengths; Charge carrier density; Distributed feedback devices; Gallium arsenide; Gratings; Ion beams; Optical pumping; Optical resonators; Periodic structures; Pump lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
