DocumentCode
897098
Title
Planar GaAs-AlGaAs MQW transverse junction ridge waveguide lasers using shallow zinc diffusion
Author
Yang, Wei ; Gopinath, Anand ; Hibbs-Brenner, Mary
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
7
Issue
8
fYear
1995
Firstpage
848
Lastpage
850
Abstract
A new transverse-junction ridge waveguide AlGaAs-GaAs multiple-quantum-well laser is demonstrated. The combination of the ridge structure and transverse junction yields advantages of stable index guiding, and a greatly simplified fabrication process with a rapid thermal diffusion time as short as three minutes.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; optical fabrication; optical planar waveguides; quantum well lasers; ridge waveguides; thermal diffusion; waveguide lasers; GaAs-AlGaAs; GaAs-AlGaAs laser; GaAs-AlGaAs:Zn; MQW transverse junction ridge waveguide lasers; fabrication process; planar ridge waveguide lasers; ridge structure; shallow Zn diffusion; stable index guiding; thermal diffusion time; transverse junction; transverse-junction ridge waveguide laser; Chemical lasers; Impurities; Optical device fabrication; Planar waveguides; Quantum well devices; Quantum well lasers; Rapid thermal processing; Waveguide junctions; Waveguide lasers; Zinc;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.403993
Filename
403993
Link To Document