• DocumentCode
    897163
  • Title

    Optical memory planes using LiNbO3and LiTaO3

  • Author

    Chen, F.S. ; Denton, R.T. ; Nassau, K. ; Ballman, A.A.

  • Volume
    56
  • Issue
    4
  • fYear
    1968
  • fDate
    4/1/1968 12:00:00 AM
  • Firstpage
    782
  • Lastpage
    783
  • Abstract
    Optical memory planes are proposed in which writing and nondestructive reading would be performed optically using a laser-induced inhomogeneity of refractive indices which has been observed in poled single crystals of LiNbO3and LiTaO3. Writing times of the order of 0.5 millisecond using a 0.4-watt Ar laser with a bit density in excess of 106per square inch appear feasible.
  • Keywords
    Crystals; Discharges; Electron tubes; Gas lasers; Helium; Laser excitation; Laser transitions; Optical refraction; Steady-state; Writing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6401
  • Filename
    1448331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897163