Resonant p-i-n-FET receivers for lightwave subcarrier systems

Author

Darcie, Thomas E. ; Kaspar, B.L. ; Talman, James R. ; Burrus, Charles A., Jr.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

6

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

582

Lastpage

589

Abstract

A theoretical and experimental analysis of narrowband resonant direct-detection p-i-n-FET receivers for subcarrier multiple-access networks is described. It is shown how a small inductance can be used to optimize the coupling between the p-i-n and FET, over a range of microwave subcarrier frequencies, minimizing the frequency-dependent thermal noise and leaving shot-noise as the ultimate limitation. Shot-noise then establishes a fixed ratio of the total usable bandwidth to the minimum received power per channel, which for the binary FSK system considered is 6.1 GHz/μmW. A resonant p-i-n-FET receiver, designed to provide maximum sensitivity between 2.5 and 5.0 GHz, has been constructed. The measured signal-to-noise ratio is in excellent agreement with that predicted by the noise analysis

Keywords

field effect transistors; multi-access systems; noise; optical communication equipment; receivers; 2.5 to 5.0 GHz; binary FSK system; lightwave subcarrier systems; noise analysis; resonant direct-detection p-i-n-FET receivers; shot-noise; signal-to-noise ratio; subcarrier multiple-access networks; thermal noise; Bandwidth; Frequency shift keying; Inductance; Microwave FETs; Narrowband; Noise measurement; PIN photodiodes; Resonance; Signal analysis; Signal to noise ratio;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.4040

Filename

4040