Title :
Operating characteristics of InGaAs-GaAs MQW hetero-nipi waveguide modulators
Author :
Koehler, S.D. ; Garmire, E.M. ; Kost, A.R. ; Yap, D. ; Docter, D.P. ; Hasenberg, T.C.
Author_Institution :
Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only 900-/spl Aring/-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low as V/sub /spl pi///spl times/L=0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.<>
Keywords :
III-V semiconductors; electro-optical modulation; frequency response; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; photoluminescence; semiconductor quantum wells; 110 Hz; InGaAs-GaAs; MQW hetero-nipi waveguide modulators; absorption modulation; detuning; frequency response measurements; ion-implanted selective contacts; modest reverse bias voltages; phase change figure of merit; photoluminescence peak; traditional selective metal contacts; Absorption; Bandwidth; Frequency measurement; Frequency response; Optical modulation; Optical waveguides; Phase measurement; Phase modulation; Quantum well devices; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
