Title :
Electrooptic and electroabsorptive modulation properties in interdiffusion-modified AlGaAs-GaAs quantum wells
Author :
Li, E. Herbert ; Choy, Wallace C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
The electric field induced refractive index change and absorption coefficient change in TE polarization are analyzed at room temperature for several interdiffusion modified Al/sub 0.3/Ga/sub 0.7/As-GaAs quantum-well structures. The results show that for the small and medium interdiffusion lengths with fields of 100 and 50 kV/cm, respectively, improved chirping and electroabsorption can be obtained. Further, in a selected set of interdiffusion lengths and fields, the material can be used for an electroabsorption modulator with reduced chirping in a wide range of operation wavelengths (758-874 nm).<>
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; chemical interdiffusion; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; refractive index; semiconductor quantum wells; 298 K; 758 to 874 nm; Al/sub 0.3/Ga/sub 0.7/As-GaAs; AlGaAs-GaAs; TE polarization; absorption coefficient change; chirping; electric field induced refractive index change; electroabsorption modulator; electroabsorptive modulation properties; electrooptic modulation properties; interdiffusion lengths; interdiffusion-modified quantum well; operation wavelengths; room temperature; Absorption; Chirp modulation; Electrooptic modulators; Excitons; III-V semiconductor materials; Monolithic integrated circuits; Phase modulation; Potential well; Refractive index; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
