• DocumentCode
    897291
  • Title

    A linear NMOS depletion resistor and its application in an integrated amplifier

  • Author

    Babanezhad, Joseph N. ; Temes, Gabor C.

  • Volume
    19
  • Issue
    6
  • fYear
    1984
  • Firstpage
    932
  • Lastpage
    938
  • Abstract
    A linear resistor has been realized by using NMOS depletion transistors operated in the triode region. While such a resistor is mainly intended for single-ended and first quadrant mode of conduction, where it achieves a nonlinearity of .03% full scale in the 0-10 V voltage range, it can also be used as a floating element and operated in the first as well as third quadrant mode of conduction (i.e. with V and I both either positive or negative) with some degradation in linearity and voltage range. A linear noninverting amplifier with an accurately controlled gain of 16 has been realized by using a high open-loop gain (90 dB) operational amplifier and dimensioning the simulated resistors to set the closed-loop gain.
  • Keywords
    Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; field effect integrated circuits; linear integrated circuits; operational amplifiers; Communication switching; Filters; Linearity; MOS capacitors; MOS devices; MOSFETs; Resistors; Silicon; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1984.1052248
  • Filename
    1052248