DocumentCode :
897298
Title :
Avalanche gain in InAsyP/sub 1-y/ (0.1
Author :
Kim, D.S. ; Forrest, S.R. ; Olsen, G.H. ; Lange, M.J. ; Martinelli, R.U. ; Di Giuseppe, N.J.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume :
7
Issue :
8
fYear :
1995
Firstpage :
911
Lastpage :
913
Abstract :
Uniform avalanche gains of 40 to 80 are observed in InAs/sub y/P/sub 1-y/ (0.1\n\n\t\t
Keywords :
II-VI semiconductors; avalanche breakdown; avalanche photodiodes; dark conductivity; indium compounds; infrared detectors; ionisation; photodetectors; 1 nA; 2.1 mum; 200 pA; In/sub x/Ga/sub 1-x/; InAs/sub y/P/sub 1-y/; InAsP; InP; LIDAR; avalanche gains; avalanche photodiodes; breakdown voltage; defect levels; electrons; gas-sensing applications; holes; ionization coefficients; lattice parameter; lattice strains; mid-IR spectral range; photodetectors; primary dark current; secondary carriers; Avalanche photodiodes; Capacitive sensors; Charge carrier processes; Composite materials; Dark current; Indium phosphide; Ionization; Laser radar; Lattices; Moisture;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.404012
Filename :
404012
Link To Document :
