High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer

Author

Rong-Heng Yuang ; Hung-Chang Shieh ; Yi-Jiunn Chien ; Yi-Jen Chan ; Jen-Inn Chyi ; Wei Lin ; Yuan-Kuang Tu

Author_Institution

Dept. of Chem. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

7

Issue

8

fYear

1995

Firstpage

914

Lastpage

916

Abstract

We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; optical fabrication; photodetectors; semiconductor devices; 1 GHz; 300 mum; In/sub 0.9/Ga/sub 0.1/P; InGaAs; InGaAs-InGaP; MSM photodetectors; characteristics; circular detection area; circular detector; dark current densities; fabrication; large-area detectors; parasitic RC constant; pseudomorphic InGaP cap layer; speed performance; square detectors; Bandwidth; Dark current; Detectors; Fabrication; Fingers; Indium gallium arsenide; Indium phosphide; Laboratories; Parasitic capacitance; Photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.404013

Filename

404013