DocumentCode :
897392
Title :
Magnetic and microwave resonance characterization of ion beam sputtered amorphous FexNi80-xB15Si5 films
Author :
Oliver, S.A. ; Harris, V. ; Ryu, J. ; Vittoria, C.
Author_Institution :
Center for Electromagn. Res., Northeastern Univ., Boston, MA, USA
Volume :
25
Issue :
5
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
3355
Lastpage :
3357
Abstract :
A series of amorphous FexNi80-xB15Si5 thin films have been deposited by ion beam sputtering. Beam parameters used during deposition were chosen to be those which produced the highest quality Fe 40Ni40B15Si5 film, as determined by the film magnetic properties. The films were characterized by reflection-electron-diffraction, resistivity, vibrating-sample-magnetometer, ferromagnetic-resonance (FMR), and frequency-swept zero-field-resonance measurements. The samples are found to be magnetically active, with no biasing external field, under 1 GHz. The small FMR linewidths, high resistivity, and large saturation magnetization show that these alloys may be applicable in thin-film microwave devices
Keywords :
boron alloys; electron diffraction examination of materials; ferromagnetic properties of substances; ferromagnetic resonance; iron alloys; magnetic properties of amorphous substances; magnetic thin films; magnetisation; nickel alloys; silicon alloys; sputtered coatings; FMR linewidths; FexNi80-xB15Si5 amorphous films; ferromagnetic-resonance; frequency-swept zero-field-resonance; ion beam sputtering; microwave resonance characterization; reflection-electron-diffraction; resistivity; saturation magnetization; thin-film microwave devices; vibrating-sample-magnetometer; Amorphous magnetic materials; Conductivity; Ion beams; Iron; Magnetic films; Magnetic resonance; Optical films; Saturation magnetization; Semiconductor films; Sputtering;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.42299
Filename :
42299
Link To Document :
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