DocumentCode
897411
Title
Exchange anisotropy in `amorphous´ Co-Gd films. II
Author
Toxen, A.M. ; Hopkins, A. ; Hagstrom, S.B. ; White, R.M.
Author_Institution
Sanford Univ., CA, USA
Volume
25
Issue
5
fYear
1989
fDate
9/1/1989 12:00:00 AM
Firstpage
3358
Lastpage
3360
Abstract
For pt.I see J. Appl. Phys., vol.64, p.5431 (1988). The authors report the results of magnetization, transmission-electron-microscopy (TEM), and X-ray-diffraction studies of GdCox films sputtered onto Si or sapphire substrates at ~90°C ambient temperature. The composition range studied was x =2-8.5. Over the composition range defined approximately by 5>x >3, the films, which are 1-3-μm thick, exhibit a unidirectionally displaced B -H loop characteristic of an exchange-coupled phase. TEM studies indicated that the samples with the shifted loops consist of a mixture of amorphous and microcrystalline phases. The characteristic size of the microstructure is 10-20 Å. Electron diffraction shows a very broad ring characteristic of the amorphous phase together with six or seven sharper rings characteristic of crystalline material, which correlate best with the hexagonal GdCo5 structure or to a high-temperature hexagonal Gd2Co17 phase. The diffraction pattern remains virtually unchanged over the composition range x =3-8, even though the phase diagram shows several line compounds. This leads to the conclusion that the microcrystalline material consists of one, or perhaps more than one, metastable phase over the indicated composition range. X-ray diffraction shows only one broad maximum. No crystalline peaks have yet been resolved
Keywords
X-ray diffraction examination of materials; cobalt alloys; exchange interactions (electron); ferrimagnetic properties of substances; gadolinium alloys; magnetic anisotropy; magnetic hysteresis; magnetic properties of amorphous substances; magnetic thin films; magnetisation; sputtered coatings; transmission electron microscope examination of materials; 1 to 3 micron; 10 to 20 angstroms; 90 C; Al2O3; Co-Gd amorphous film; Si; TEM; X-ray-diffraction; amorphous phase; electron diffraction; exchange anisotropy; exchange-coupled phase; ferrimagnet; magnetization; microcrystalline material; phase diagram; sapphire substrates; sputtered film; transmission-electron-microscopy; unidirectionally displaced B-H loop characteristic; Amorphous materials; Anisotropic magnetoresistance; Crystalline materials; Electrons; Lead compounds; Magnetization; Microstructure; Semiconductor films; Temperature; X-ray diffraction;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.42300
Filename
42300
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