DocumentCode
897498
Title
A Trapping Mechanism for Autodoping in Silicon Epitaxy - I. Theory
Author
Wong, Man ; Reif, Rafael
Volume
20
Issue
1
fYear
1985
Firstpage
3
Lastpage
8
Abstract
An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms ( N 0 over A) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.
Keywords
Elemental semiconductors; Semiconductor doping; Semiconductor growth; Silicon; Vapour phase epitaxial growth; Atomic layer deposition; Differential equations; Doping profiles; Epitaxial growth; Epitaxial layers; Semiconductor process modeling; Silicon; Solid state circuits; Substrates; Tail;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052270
Filename
1052270
Link To Document